Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Application filed by Shanghai Huahong Grace Semiconductor Manufacturing Corp filed Critical Shanghai Huahong Grace Semiconductor Manufacturing Corp Priority to CN201310306492.2A priority Critical patent/CN104298796B/en Publication of CN104298796A publication Critical patent/CN104298796A/en Application granted granted Critical Publication of CN104298796B publication Critical patent/CN104298796B/en Status Active legal-status Critical Current Anticipated expiration legal-status Critical Links Original Assignee Shanghai Huahong Grace Semiconductor Manufacturing Corp Priority date (The priority date is an assumption and is not a legal conclusion. Shanghai Huahong Grace Semiconductor Manufacturing Corp Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) ( en Inventor 武洁 Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Granted Application number CN201310306492.2A Other languages Chinese ( zh) Google Patents Equivalent circuit and simulation method for Schottky diodeĭownload PDF Info Publication number CN104298796A CN104298796A CN201310306492.2A CN201310306492A CN104298796A CN 104298796 A CN104298796 A CN 104298796A CN 201310306492 A CN201310306492 A CN 201310306492A CN 104298796 A CN104298796 A CN 104298796A Authority CN China Prior art keywords diode schottky schottky diode anode negative electrode Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents CN104298796A - Equivalent circuit and simulation method for Schottky diode CN104298796A - Equivalent circuit and simulation method for Schottky diode
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